They are obviously not targeting the linear market. For linear applications,
limiting these devices at 175 C is absurd, SiC can easily take 250 C
junction temperature before even thinking about increasing the leakages.
Baruch Zilbershatz
Nitzanay-Oz 118
Nitzanay -Oz
42836
ISRAEL
phone: (+)972-052 8753838
-----Original Message-----
From: amps-bounces@contesting.com [mailto:amps-bounces@contesting.com] On
Behalf Of John Lyles
Sent: Thursday, November 25, 2010 8:46 PM
To: amps@contesting.com
Subject: [Amps] Silicon Carbide J-FET
I don't know if its similar, but we have some special SiC SITs (static
induction fets) from Microsemi that are capable of 1600 watts a piece
(not push pull) with about 120 volts Vdd. This is, mind you, in pulsed
mode (20% duty) tuned at 200 MHz. We tested their original parts at 800
watts peak, with 100 volts of bias. They were just like tubes in that
they needed a negative bias to cut them off, then a less negative to
make them conduct. Unfortunately, loss of bias (such as a loose
connection) would cause them to burnout if special protection was not
added. These are not as high a gain as LDMOS, since they are configured
in common gate (like grounded grid!). I'd be curious to hear more about
the SemiSouth parts.
John
K5PRO
Message: 8
> Date: Thu, 25 Nov 2010 20:47:13 +0800
> From: "Hsu"<hsu4qro@gmail.com>
> Subject: [Amps] Silicon Carbide J-FET
> To:<amps@contesting.com>
> Message-ID:<B73524FC99204CE7BB5A5CD5CBADEDB5@PC201007302303>
> Content-Type: text/plain; charset="iso-8859-1"
>
> I just download some SemiSouth's Silicon Carbide power J-FET datasheet,I
found these FET's shoud with very good frequency response, anyone use it
build RF amplifier or antenna switch?
> 73!Hsu
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