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1. Re: [Amps] design approach for QRO solid state (score: 1): Author: "Leigh Turner" <invertech@frontierisp.net.au>; Date: Thu, 12 Sep 2013 16:42:08 +0930; Yes, that's right Don. With a 9:1 xfmr the device load-line would be such that one will never achieve the potential power output capability of 4 x VRF2933 devices...it will flatten / max out at fewer; /archives//html/Amps/2013-09/msg00064.html (13,044 bytes)
2. Re: [Amps] design approach for QRO solid state (score: 1): Author: "Roger (K8RI)" <k8ri@rogerhalstead.com>; Date: Thu, 12 Sep 2013 08:41:50 -0400; This may not be germane to the building of the amplifier and it is by necessity an over simplification, but it is the temperature problem explanation for those not familiar to transistor failure and; /archives//html/Amps/2013-09/msg00067.html (15,920 bytes)
3. Re: [Amps] design approach for QRO solid state (score: 1): Author: "Jim Garland" <4cx250b@miamioh.edu>; Date: Thu, 12 Sep 2013 07:36:32 -0600; Roger, That's a fabulous tutorial. Thanks very much! Jim Garland W8ZR compounds. system. properly _______________________________________________ Amps mailing list Amps@contesting.com http://lists.co; /archives//html/Amps/2013-09/msg00070.html (16,893 bytes)
4. Re: [Amps] design approach for QRO solid state (score: 1): Author: peter chadwick <g8on@fsmail.net>; Date: Thu, 12 Sep 2013 17:21:20 +0200; Adding to Roger's comment on diffusion and temperature, this is why old tunnel diodes are often u/s. Tunnel diodes use very high doping levels, and some diffusion occurs over time even at room temper; /archives//html/Amps/2013-09/msg00076.html (7,236 bytes)
5. Re: [Amps] design approach for QRO solid state (score: 1): Author: "Jeff Blaine" <keepwalking188@yahoo.com>; Date: Thu, 12 Sep 2013 21:51:14 -0500; The SS stuff is haunted by the two gremlins same as always. Low impedances (which make cooking up the I/O and combiners hard to do efficiently) and moving the massive heat generated out fast enough.; /archives//html/Amps/2013-09/msg00098.html (8,044 bytes)

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